Offered in two product families, the SuperFET II and SuperFET II Easy Drive, these MOSFETs offer a smaller stored energy in output capacitance (Eoss) for higher efficiency in light-load conditions and best-in-class robust body diode for increased system reliability in resonant converters.
Utilizing an advanced charge balance technology, these MOSFETs provide a significantly low on-resistance and a lower gate charge (Qg) performance for a lower figure of merit. The devices are comprised of several integrated features to assist in a simplified design that reduces component count for a more efficient, cost-effective design including a gate resistor (Rg) that greatly reduces gate oscillation and improves overall system performance.
Benefits and Features:
SuperFET II MOSFET
• Faster switching speed to maximize system efficiency
• Increased power density
SuperFET II MOSFET Easy-Drive
• Easy to design and use
• Optimized switching performance
• Low electromagnetic interference noise
• Reliable operation at abnormal conditions
Packaging and Pricing Information (in US 1,000 quantity pieces)
Samples available upon request – Delivery 8-12 weeks ARO
