ST offers a wide portfolio of power MOSFETs ranging from -100 to 1,700V, IGBTs with breakdown voltages ranging from 300 to 1,250V and power bipolar transistors ranging from 15 to 1,700V.
Due to the improved thermal design of ST’s power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the highest temperature rating of 200°C and voltage ranging from 650 to 1,700V.
STMicroelectronics wide STPOWER product portfolio combined with packaging and protections for high reliability and safety helps designers find the right solutions for customised, high efficiency applications that will last a long lifetime.