These IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20kHz.
In addition, the devices offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits and minimising energy losses in circuits with a freewheel diode.
With latch-up-free operation at up to four times the nominal current, and minimum short-circuit time of 5µs (at 150°C starting junction temperature) the IGBTs can cope in rugged conditions. The extended maximum operating junction temperature of 175°C helps enhance service lifetime and simplify system cooling. A wide Safe Operating Area (SOA) boosts reliability in applications where high power dissipation is required.
Excellent EMI (electromagnetic interference) characteristics are achieved thanks to a near ideal waveform during switching events. A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device, allows safer parallel operation in high-power applications.
The H-series IGBTs are in mass production now, in 15A, 25A, and 40A versions