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Toshiba Introduces Low RDS (ON) P-ch MOSFETs for Mobile Devices

23rd May 2013

Toshiba

ES Admin

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Toshiba America Electronic Components has announced the addition of three new high current P-ch MOSFETs: the SSM6J505NU, SSM6J501NU and SSM6J503NU. Supporting high currents for high power dissipation packages, the new MOSFETs make ideal charging switches for smartphones and other mobile devices with high current charging circuits.

As the battery capacity of smartphones and other mobile devices increases, the charging current increases as well. Toshiba used the latest UMOS VI process to design the SSM6J505NU, SSM6J501NU and SSM6J503NU in a small 2.0mm × 2.0mm × 0.75mm (UDFN6B) package that achieves low ON-resistance and allows large currents.

As additional functions are added to mobile devices and more demands are made on their batteries, boosting charge density and improving the user experience by reducing charging time become top priorities, noted Talayeh Saderi, senior business development engineer for TAEC. Engineers designing smartphones, laptops, DSCs, and other portable devices will find that our new MOSFETs help them achieve these outcomes – and offer the best performance in their class.
Pricing and Availability :

Toshiba’s new low RDS(ON) MOSFETs are available now. Budgetary pricing begins at $0.13 for sampling quantities.