High power SiC diodes offer excellent switching performance
IXYS has today announced the launch of two new series of high power Silicon Carbide diodes. The SS150 and SS275 Series feature three diode configurations to provide designers with flexible connection and layout options. Providing excellent switching performance, the SS150 and SS275 Series high power Silicon Carbide diodes are packaged in IXYS' low inductance, surface mount DE Series package.
The SS150 and SS275 are both available in 600V, 10A and 1200V, 5A ratings. Standard internal configurations include:
- TI – Triple Independent – no common connections,
- TA – Triple Anode – anodes are tied together,
- TC – Triple Cathode – cathodes are tied together.
The SS150 and SS275 High Power Diode SiC Modules are ideal for applications such as:
- MHz Switch Mode Power Supplies,
- High Frequency Converters,
- Resonant Converters,
- Rectifier Circuits.
The use of Silicon Carbide allows extremely fast switching, high frequency operation, with zero recovery and temperature independent behavior. Coupled with our low inductance RF package, these diodes can be utilized in any number of fast switching diode circuits or high frequency converter applications.
SS150 & SS275 key features:
- Surface Mount Package,
- 600V, 10A and 1200V, 5A Available,
- Zero Reverse Recovery,
- Zero Forward Recovery,
- High Frequency Operation,
- Temperature Independent Behaviour,
- Low Inductance,
- Positive Temperature Coefficient for Vf.
“The SS150 and SS275 High Power SiC Diode Modules allow designers more flexible design options with high frequency applications,” commented Stephen Krausse, General Manager of IXYS Colorado.
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