Both series are suited to applications that include power supplies for microcontrollers (MCU), RF devices, and camera CMOS sensors in mobile devices or imaging and audio-visual equipment, which increasingly require lower voltage supplies in the region of 1.0V.
By using a low on-resistance N-channel MOSFET fabricated with the latest generation process and external bias voltage, both series have significantly reduced the dropout voltage that causes power loss, to approximately 33% less than Toshiba’s current products. These levels represent the lowest dropout voltages in the industry.
In addition, with a 98dB ripple rejection ratio, the new products deliver stable operation resistant to high frequency noise from the external environment and DC/DC converters, both of which are potential causes of improper operation. They also deliver a fast load transient response that prevents malfunctioning due to swift switching of IC operation modes.
Quiescent current (TCR5BM=19μA, TCR8BM=20μA) is about 50% lower than other high current LDO regulators in the market, enabling lower power consumption in applications and thereby delivering longer operating times for battery-driven devices.
Both series are housed in the small surface mount DFN5B package with a footprint of just 1.2×1.2mm.
