SiP embeds half-bridge driver with two GaN transistors
STMicroelectronics MASTERGAN1 SiP implements a high power density power supply with the integration of both a gate driver and two enhancement-mode GaN transistors in a half-bridge configuration.
The integrated power GaNs feature an RDS(ON) of 150mΩ and 650V drain-source breakdown voltage. The integrated bootstrap diode can quickly supply the high side of the embedded gate driver.
The SiP provides UVLO protection on both the lower and upper driving sections.
This protection prevents the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.
The extended range of the input pins allows easy interfacing with microcontrollers, DSP units, or Hall effect sensors.
Applications for the MASTERGAN1 SiP include switch-mode power supplies, high-voltage PFC, DC-DC and DC-AC converters, chargers and adapters, UPS Systems, and solar power.