The 1200V SCT20N120 features RDS(ON) better than 290mΩ all the way to the 200°C maximum operating junction temperature. Highly stable turn-off energy (Eoff) and gate charge (Qg) enables consistent switching performance over the widwe temperature range. The resulting low conduction and switching losses combine with ultra-low leakage current to simplify thermal management and maximise reliability.
According to ST, the SiC MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs, allowing designers to specify smaller external components and save size, weight and BOM costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for EVs.
ST’s proprietary HiP247 package with enhanced thermal efficiency enables reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.
The SCT20N120 is available now from $8.50 in 1,000 unit quantities.