Power

SiC MOSFET comes in seven-lead TO-263-7 surface mount package

29th August 2017
Mick Elliott

Availability and full design support capabilities for a new silicon carbide power MOSFET from Wolfspeed have been announced by Richardson RFPD. The 1200V, 75 mΩ C3M0075120J features Wolfspeed’s C3M SiC MOSFET technology and is available in a compact, seven-lead TO-263-7 surface mount package.

The Kelvin source Pin 2 in the TO-263-7 package supports driving the device at higher frequencies and enables highly efficient designs. 

The MOSFET features 7mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr). 

The device is optimised for renewable energy, EV battery charger, high-voltage DC/DC converter and switch-mode power supply applications. 

Key features of the C3M0075120J include: 

  • Drain source voltage (Vds max): 1200V
  • Continuous drain current (Id) at 25°C: 30A
  • Rds(on): 75mΩ
  • Total gate charge (Qg): 51nC
  • Maximum junction temperature: 150°C
  • Output capacitance (Coss): 58pF
  • Reverse-recovery charge (Qrr): 220nC
  • Reverse-recover time (Trr): 18ns

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