Part of the extensive line of high-performance SiC FETs, this fourth-generation family of devices are said to offer industry-leading figures of merit in on-resistance, suiting it to power solutions in mainstream 800 V bus architectures in applications such as on-board chargers for EVs, industrial battery chargers, industrial power supplies, DC-DC solar inverters, and more.
The devices provide designers with multiple on-resistance and package options. The 1200 V SiC FETs are offered in versions with on-resistance (RDS(on)) values of 23 mΩ to 70 mΩ and either a three-lead TO-247-3L package or a four-lead TO-247-4L package.
The TO-247-4L package incorporates a Kelvin gate to deliver ultra-low gate charge and exceptional reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring a standard gate drive.
All the devices in the UF4C/SC family can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage, creating a suitable replacement for silicon IGBTs, FETs, or super-junction devices without changing the gate drive voltage.
Other notable features of the UF4C/SC SiC FETs include an exceptional threshold noise margin preserved with a true 5 V threshold voltage, excellent reverse recovery, and a built-in ESD gate protection clamp.
