SiC FETs deliver increased efficiency for EV inverters

UnitedSiC UF3SC Silicon Carbide FETs are based on a unique cascode circuit configuration that employs a normally on SiC JFET that is co-packaged with a silicon MOSFET to produce a normally off SiC FET device.

The FETs feature standard gate-drive characteristics that allow a true drop-in replacement to silicon IGBTs and FETs, SiC MOSFETs, or silicon super-junction devices.

They offer low intrinsic capacitance, ultra-low gate charge, and excellent reverse recovery. The FETs offer maximum operating temperatures up to 175 degrees Celsius and are ideal for use in electric vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.

The SiC FETs are available in TO-247-3L packaging for faster switching and clean gate waveforms, or a low-profile DFN 8x8 surface-mount package that enables ultra-low R_DS(ON).