SiC FETs boast 750 VDS rating
The UJ4C devices are the first SiC FETs on the market to have a 750 VDS rating.
UnitedSiC UJ4C 750V Gen 4 SiC (Silicon Carbide) FETs are based on a cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si FET to produce a normally-off SiC FET device.
The UJ4C 750V Gen 4 SiC FETs are designed to accelerate the power performance gains in automotive and industrial charging, telecom rectifiers, data centre PFC DC-DC conversion, as well as renewable energy and energy storage applications.
Available in 18mΩ and 60mΩ options, these new SiC FETs deliver best-in-class Figures of Merit (FoM) with reduced on-resistance per unit area and low intrinsic capacitance.
In hard-switching applications, the Gen 4 FETs exhibit ultra-low RDS(on) x EOSS, resulting in lower turn-on and turn-off loss.
Applications for the include PV inverters, EV charging, switched-mode power supplies, power factor correction modules, motor drives, and induction heating.