SiC family opens up power options
The EliteSiC portfolio includes diodes, MOSFETs, IGBT and SiC diode Power Integrated Modules (PIMs), and AEC-Q100-qualified devices.
These devices are optimised to provide reliable, high-efficiency performance for energy infrastructure and industrial drive applications.
Renewable energy and high-power industrial applications require a high breakdown voltage (BV), as provided by the 1700 V NTH4L028N170M1 EliteSiC MOSFET.
The NTH4L028N170M1 offers a maximum gate-to-source voltage (VGS) range of -15 V to +25 V, making it suitable for fast switching applications where gate voltages are increasing to -10 V, delivering improved system reliability.
The 1700 V EliteSiC MOSFET achieves a market-leading gate charge (Qg) of 200 nC at a test condition of 1200 V at 40 Amps. This low Qg enables the device to achieve high efficiency in fast switching, high-power renewable energy applications.
With a BV rating of 1700 V, the NDSH25170A and NDSH10170A EliteSiC Schottky diodes provide an improved margin between the maximum reverse voltage (VRRM) and the peak repetitive reverse voltage of the diode.
These devices also allow designers to achieve stable high-voltage operation at elevated temperatures while offering high efficiency enabled by SiC.
Whether it’s an EV charging station, a power grid utilizing renewable energy or high-voltage/high-current industrial drive applications, the onsemi EliteSiC solutions deliver best-in-class efficiency with reduced power losses.