SemiQ SiC MOSFETs 6-pack modules: high power density, low switching loss

The rugged, high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These are arranged in a three-phase bridge topology, with the modules additionally featuring split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation.

The high-power-density modules benefit from low switching losses, as well as low junction-to-case thermal resistance and all parts have been tested beyond 1,350V, with 100% wafer-level burn in (WLBI).

They have been developed for applications including AC/DC converters, energy storage systems, battery charging, motor drives, and PFC boost converters, including EV fast charging, induction heating and welding, renewable energy supplies, and UPS.

The modules are operational to 175^oC junction temperature, and have been designed for easy mounting, including direct mounting to a heatsink. The product family has been launched with 20, 40, and 80mΩ variants (GCMX020A120B2T1P, GCMX040A120B2T1P, and GCMX080A120B2T1P) that have a power dissipation of 263, 160, and 103W respectively.

They conduct a continuous drain current of 29-30A, and a pulsed drain current of 70A. Additionally, they have turn-on switching energy of 0.1-0.54mJ and a turn-off switching energy of 0.02-0.11mJ, with a switching time of 56-105ns.

The module is available immediately in a 62.8 x 33.8 x 15mm package including heatsink mountings.