SemiQ has expanded its family of 1200V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer RDSon values of 7.4, 14.5, and 34mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), have lower switching losses at high temperature, especially compared to non-SBD GCMX modules.
The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400V and are avalanche tested to 800mJ (330mJ for 34mΩ modules).
All modules are highly rugged, easy to mount, and feature an isolated backplate as well as direct mounts for a heat sink. They have been engineered to enhance performance and switching speeds while minimising losses in such applications. The 7.4mΩ GCMX007C120S1-E1 reduces switching losses to 4.66mJ (3.72mJ turn on, 0.94mJ turn off) and has a body diode reverse recovery charge of 593nC.
Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4mΩ MOSFET module to 0.70°C/W for the 34mΩ MOSFET module.
Dr. Timothy Han, President at SemiQ, said: “The expansion of our third-generation 1200V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
