These high-performance MOSFETs are distinguished by their low drain-source on-state resistance (RDS(on)) of 0.17 Ω, low input capacitance (CISS) of 1,080 pF, and minimal switching and power losses. Designed to withstand high operating temperatures, these robust components are ideal for use in industrial applications, power supplies, renewable energy systems, lighting, and telecommunications.
Incorporating the advanced technology of Vishay’s 4th generation E Series Power MOSFETs, these components also feature a low effective output capacitance of 39 pF and an excellent figure-of-merit (FOM) Ron x Qg. Their design makes them particularly suited for high-temperature applications such as switching power supplies, battery chargers, photovoltaic inverters, and fluorescent lamps with ballasts.
These components are lead-free and comply with RoHS standards.
Key features:
- 4th generation E Series technology by Vishay
- Low figure-of-merit (FOM)
- RDS(on) of 0.17 Ω
- Low effective output capacitance of 39 pF
- Minimized switching and power losses
- Avalanche energy rating
Applications:
- Power supplies for servers and telecommunications
- Switch-mode power supplies (SMPS)
- Power factor correction (PFC) power supplies
- Lighting solutions:
- High-intensity discharge (HID) lighting
- Fluorescent ballast lighting
- Industrial applications:
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)