Power

Robust 1,200V level-shift three-phase SOI EiceDRIVER

27th November 2020
Alex Lynn

Infineon Technologies has broadened its level-shift EiceDRIVER portfolio with a 1,200V three-phase gate driver. It is based on the company’s silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes.

These features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 provides 350/650mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a +/-5% reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40Ω.

Negative VS transient voltage immunity of -100V with repeating 700ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

The EiceDRIVER 6ED2230 can be ordered now in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions) with a unique footprint. This package has a reduced pin-count leading to a 2kV ESD rating according to human-body model (HBM).

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