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Power Z-FET boosts system switching reliability

Richardson RFPD is now offering availability and full design support capabilities for a new silicon carbide power Z-FET from Cree. The C2M0040120D is a 1200V, 40mOhm RDS(on) SiC MOSFET that features N-channel enhancement mode and is available in a TO-247-3 package. Benefits of the device include higher system efficiency, reduced cooling requirements, and increased system switching frequency and reliability.  
24 July 2014
byNews Desk

It is ideally suited for solar inverter, switch-mode power supply, high-voltage DC/DC converter, and motor drive applications.  

According to Cree, additional key features of the new SiC MOSFET include: continuous drain current (ID);   60A (@ 25ºC);   40A (@ 100ºC); high-speed switching with low capacitances; high blocking voltage with low RDS(on); easy to parallel and simple to drive; and resistant to latch-up

24 July 2014
byNews Desk

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LED flood system has an instant on/off function

24 July 2014
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Magnetic field sensor ICs based on proprietary technology

24 July 2014

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