Half-bridge module mitigates over-voltage protection

Richardson RFPD has availability and full design support capabilities for a new 1.2kV, 13mΩ all-silicon carbide half-bridge module from Cree.  The CAS120M12BM2 includes C2M MOSFETs and Z-Rec diodes and features ultra-low loss, high-frequency operation, zero reverse recovery current from the diodes, zero turn-off tail current from the MOSFETs, fail-safe operation, ease of paralleling, and a copper baseplate and aluminum nitride insulator.

It is available in an industry-standard 62 mm housing for ease of design.

The new module enables compact and lightweight systems, offers high efficiency operation, mitigates over-voltage protection, and facilitates reduced thermal requirements and system cost.

It is ideally suited for a range of applications, including induction heating, solar and wind inverters, DC/DC converters, line regeneration drives, and battery chargers.

According to Cree, additional key features of the module include:

  • Drain source voltage (VDSmax): 1.2kV
  • Total switching energy (ESW) (@ 120A, 150 ºC): 2.1mJ
  • On state resistance (RDS(on)) (Typical, VGS=20V, IDS=120A): 13mΩ
  • Package size: 62 mm x 106 mm x 30 mm

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