The transistor provides high gain, efficiency, bandwidth and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions.
The new HEMT is available in a standard flange package (MAGX-000912-650L00) and an earless flange package (MAGX-000912-650L0S).
According to MACOM, additional key features of the MAGX-000912-650L0x include: GaN on SiC depletion-mode transistor technology, common-source configuration, broadband Class AB operation, 50V operation, and 800W performance at 20μs and 6% duty factor