The 100V, 120mΩ MOSFET is supplied in a four-lead, TO247-4 package, with a separate driver source pin.
The device features the company’s C3M SiC MOSFET technology and delivers a creepage distance of 8.0mm between drain and source, together with high blocking voltage with low on-resistance of 120mΩ and total gate charge (Qg) of 21.5nC. It is also characterised by high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr) of 154nC and reverse-recover time (Trr) of 16ns, says the company. Output capacitance is 40pF and maximum junction temperature is 150°C.
The MOSFET is optimised, says the company, for renewable energy, EV battery charger, high-voltage DC/DC converter and switch-mode power supply applications.