Each is an input-matched GaN transistor packaged in an air cavity ceramic package providing excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized, matching networks external to the package that provide wideband gain and high efficiency, all in a single amplifier ideal for linear correction circuits.
Features
• Peak power: 125W (RFHA1042), 150W (RFHA1043)
• Single circuit for frequency: 225MHz to 450MHz (RFHA1042), 1.2GHz to 1.85GHz (RFHA1043)
• 48V modulated performance:
o POUT: 45.2dBm
o Gain: 18.5dB (RFHA1042), 15.5dB (RFHA1043)
o Drain Efficiency: 42% (RFHA1042), 30% (RFHA1043)
o ACP: -26dBc (RFHA1042), -30dBc (RFHA1043)
• 48V CW broadband performance
o POUT: 51.4dBm (RFHA1042), 52dBm (RFHA1043)
o Gain: 16dB (RFHA1042), 13.5dB (RFHA1043)
o Drain Efficiency: 60% (RFHA1042), 51% (RFHA1043)
• Optimized for video bandwidth and minimized memory effects
• Large signal models available
These products are currently available in production quantities.