Power

RF transistors based on laterally-diffused LDMOS technology

25th September 2017
Mick Elliott

The MRFX1K80H LDMOS transistor from NXP Semiconductors is now being shipped by Mouser Electronics. The device is part of the MRFX series of radio frequency (RF) MOSFET transistors that incorporate a new laterally diffused metal oxide semiconductor (LDMOS) technology. The LDMOS technology found in the MRFX1K80H helps increase the output power in wideband applications while maintaining appropriate output impedance.

The LDMOS transistor is designed to deliver 1800W of a continuous wave at 65 V for RF applications from 1.8 to 470MHz with the ability to handle a voltage standing wave ratio (VSWR) of 65-to-1 at all phase angles.

The device offers impedance matching to 50Ohms, helping to reduce the overall development time. Designed for an extended power range from 30V to 65V, the MRFX1K80H features a high breakdown voltage that provides enhanced reliability and higher efficiency.

The high voltage lowers the current in the system, limiting the stresses on DC power supplies thereby reducing magnetic radiation.

The higher output power also helps decrease the number of transistors to combine and simplify the power amplifier complexity and reduce the overall size.

The transistor is suitable for linear applications with appropriate biasing and offers integrated electrostatic discharge (ESD) protection for improved Class C operation.

Target applications for the MRFX1K80H include industrial, scientific, and medical (ISM) applications as well as broadcast, aerospace, and mobile radio equipment.

 

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