Power

RF transistor's 65V LDMOS technology speeds power design

17th September 2017
Mick Elliott

Availability and full design support capabilities for a new 65V, wideband RF power LDMOS transistor from NXP Semiconductors has been announced by Richardson RFPD. The MRFX1K80H is the first product in NXP's MRFX series. It is designed to deliver 1800W CW at 65V for applications from 1.8 to 400MHz and is capable of handling 65:1 VSWR.

Available in an air cavity ceramic package, it is a high-ruggedness transistor designed for use in high-VSWR ISM applications, as well as radio and VHF TV broadcast, sub-GHz aerospace, and mobile radio applications.

Its input and output design allows for wide frequency range use from 1.8 to 400MHz. 

The device can be used single-ended or in a push-pull configuration. It is qualified up to a maximum of 65 VDD operation and characterised from 30V to 65V for extended power range.

It offers high breakdown voltage for enhanced reliability and it is suitable for linear application with appropriate biasing.

Included in NXP product longevity programme with assured supply for a minimum of 15 years after launch the device has integrated ESD protection with greater negative gate-source voltage range for improved Class C operation.

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