RF LDMOS power transistor replaces magnetrons

10th January 2018
Mick Elliott

Availability and full design support capabilities for an RF power LDMOS transistor from NXP Semiconductors have been announced by distributor Richardson RFPD. The MRF13750H/ MRF13750HS, available in bolt-down and solder-down styles, is a 750W continuous wave transistor designed for industrial, scientific and medical (ISM) applications in the 700 to 1300MHz frequency range.

It is capable of CW or pulse power in narrowband operations. 

The new transistor is internally input-matched, can be used single-ended or in a push-pull configuration and is characterised for 30 to 50V.

It is suitable for linear applications with appropriate biasing and includes integrated ESD protection. 

The MRF13750H/HS offers ease-of-use to microwave generator designers, delivering precision, control and reliability not available with vacuum tube-era technologies such as magnetrons.

It supports accurate power control over the full dynamic range from 0 to 750W, enabling frequency shifting that helps make precise use of RF energy. 

Typical ISM applications for the MRF13750H/HS include 915MHz industrial heating and welding systems and 1300 MHz particle accelerators. 

An associated test fixture tuned to 915MHz is available.

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