Power

Qspeed silicon diodes feature low Qrr for switching-speed

24th June 2021
Alex Lynn

Power Integrations has announced its 600V 12A Qspeed diode, delivering low reverse recovery charge (Qrr) for a silicon diode. With a Qrr of just 14 nC at 25°C, it improves efficiency of the PFC stage of on-board chargers and significantly reduces the thermals of the PFC MOSFETs.

The AEC-Q101-qualified QH12TZ600Q offers the same low-switching loss performance of a silicon carbide (SiC) device without the disadvantages of moving to more expensive technology.

Edward Ong, senior product marketing manager at Power Integrations, said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system efficiency. This is particularly important for automotive on-board charger applications that require higher switching frequency to reduce volume and weight, and enables the Qspeed diodes to replace SiC devices.”

The QH12TZ600Q uses merged PiN and Schottky diode technology to achieve high performance. Its smooth reverse recovery current transition characteristics not only increase efficiency, but also reduce EMI and peak reverse voltage stress, eliminating the need for snubbers when used as output rectifiers in on-board chargers. Devices are available in the compact, 2.5kV isolated TO-220 package which enables direct mounting to metal heat sinking, facilitating excellent thermal performance.

The new 600V 12A Qspeed diodes are priced at $1.17 in 10,000-piece quantities.

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