As the DF2B7ASL features a snapback characteristic, it can provide low clamping voltages, which together with the low dynamic resistance of the diode ensures superior protective performance to safeguard semiconductors ICs against static electricity. Housed in ultra-compact packaging, the device is designed for applications requiring small footprints – including interfaces in smart phones, wearables and other battery powered equipment.
While featuring low dynamic resistance of just 0.2Ω and a low clamping voltage (VC) of 11V at 5V signal lines (VRWM ≤ 5.5V), the DF2B7ASL still offers an electrostatic discharge voltage rating of +/-30kV in accordance with IEC61000-4-2 (contact discharge).
Taking the need for small footprints into consideration, the new Toshiba diodes are supplied in a SOD-962 (SL2) package with a board mounting footprint of only 0.32×0.62mm.
