Power

Proprietary cell technology reduces switching losses

22nd May 2015
Caroline Hayes

Silicon has been made more robust, claims Fairchild Semiconductor, at the announcement of its fourth generation Field Stop (FS) IGBTs. The IGBTs will target solar and battery chargers as well as UPS, where fast switching and low conduction losses can reduce system cost and increase power density.

Silicon has been made more robust, claims Fairchild Semiconductor, at the announcement of its fourth generation Field Stop (FS) IGBTs.

The IGBTs will target solar and battery chargers as well as UPS, where fast switching and low conduction losses can reduce system cost and increase power density.

A self-balancing cell build manufacturing process uses self-aligned contact technology to ensure cells are balanced for even distribution and increased cell density. The resulting IGBTs are an alternative for MOSFETs says the compny and can be used where high current densities and dynamic switching at a wide temperature range is required. The IGBTs operate from -40 to 175ºC.

The design enables low saturation voltage (Vce(sat) = ~ 1.65V) and low switching loss (Eoff = 5µJ/A) for robust, efficient operation in industrial and automotive – EV and HEV - markets.

The company has also released a design and simulation infrastructure package calibrated for all low- and high-voltage power devices.

According to the company, this generation reduces energy loss by 30%.

Further details of the product family will be made available Q4 2015.

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