The transistor has internal pre-match for optimal performance, and it utilises gold metallisation and eutectic attach to provide outstanding reliability and superior ruggedness.
Additional key features of the 1011GN-1200V include power gain of 20 dB (typ.), drain efficiency 75% (typ.), 50VDC supply voltage. The device comes in a 55Q03 package.
The 1011GN-1200V is part of Microsemi’s portfolio of GaN power transistors designed and optimised for radar and avionics to meet the need for smaller footprints, reduced weight, and higher power density and efficiency.