Thanks to the lowest on-state resistance (RDS(on)) the BiC MOSFETs enable reduced losses at a good price-performance ratio.
Low thermal impedance between Junction to Case (RthJC) provides excellent thermal behaviour, which promotes a lower full load temperature.
Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimises the need for snubber circuits.
As a result, engineering costs and effort are reduced.
The 175° rating of the BiC MOSFETs facilitates designs with either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature.
With the increases in the temperature rating, a 20% improvement in the safe operating area (SAO) is achieved.
The BiC MOSFETs are ideal for applications such as telecom, server, three-phase inverter, low voltage drives as well as for class D audio applications. The Infineon OptiMOS BiC power MOSFET portfolio includes versions from 60V to 250V.
