Power MOSFETs for automotive motion control

Available with maximum voltage (VDSS) and current (ID) ratings of 60V and 150A, Toshiba’s new MOSFETs are based on the company’s latest U-MOS trench semiconductor technology. This technology contributes to typical RDS(ON) specifications as low as 1.7mΩ and typical input capacitances (Ciss) down to just 4500pF. As a result, the devices offer the industry’s smallest RDS(ON)* gate charge (Qg) ‘figure of merit’, which ensures optimum switching speed and efficiency.

All of the new MOSFETs are supplied in Toshiba’s TO220SM(W) package. This uses copper connectors and a wide source terminal to drive down RDS(ON) and package inductance, reduce thermal resistance, and ensure high current carrying capacity. The package is qualified to AEC-Q101 at a channel temperature of 175ºC. A thickness of just 3.7mm means that it is 21% thinner than existing TO-220SM package technology.

Toshiba’s current line-up of TO220SM(W) automotive MOSFETs comprises five devices with respective current/voltage ratings of -60V/-120A (TJ120F06J3); 40V/100A (TK100F04K3); 40V/150A (TK150F04K3); 60V/100A (TK100F06K3); and 60V/130A (TK130F06K3). Typical RDS(ON) ratings range from 1.7mΩ to 5.5 mΩ, while typical Ciss and Qg ratings range from 4500pF and 98nC to 11500pF and 258nC.

As well as the MOSFETs themselves, Toshiba can also offer driver ICs, evaluation boards and a range of technologies and support that will simplify and speed the development of complete automotive motor control designs.