Power MOSFET provides On-resistance of 1.5mΩ at 4.5V
New Yorker Electronics has released the new Vishay Siliconix 30V N-Channel TrenchFET Gen V power MOSFET that delivers increased power density and efficiency for both isolated and non-isolated topologies.
Offered in the 3.3mm by 3.3mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN features best in class on-resistance of 0.95mΩ at 10V, a 5% improvement over the previous generation product.
In addition, the device delivers on-resistance of 1.5mΩ at 4.5V, while its 29.8mΩ*nC on-resistance times gate charge at 4.5V — a critical figure of merit (FOM) for MOSFETs used in switching applications — is one of the lowest on the market.
The MOSFET’s FOM represents a 29% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.
It has a temperature range of -55° to +150°.
The single configuration SiSS52DN is ideal for low side switching for synchronous rectification, synchronous buck converters, DC/DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment.
By delivering high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.
The new device is also 100 % RG- and UIS-tested, RoHS-compliant and halogen-free.
It enables higher power density with very low RDS(on)
It comes in a thermally enhanced compact package.
Applications include DC/DC converter, POL, synchronous rectification, battery management and power and load switch.