Offered in the 6mm by 5mm PowerPAK SO-8 package, the device is one of only two 25V MOSFETs with maximum on-resistance below 0.6mΩ. In comparison, the SiRA20DP offers lower typical gate charge of 61nC and a 32% lower FOM of 0.035Ω*nC.
The SiRA20DP’s low on-resistance minimises conduction power losses to improve system efficiency and enable higher power density, which is ideal for OR-ring functions in redundant power architectures.
The device’s low FOM enhances switching performance for DC/DC conversion in telecom and server power supplies, battery switching in battery systems, and load switching for 5 V to 12 V input rails.
The MOSFET is 100 % RG– and UIS-tested, RoHS-compliant, and halogen-free.