The EPC2218 (3.2 mΩ, 231 Apulsed) and the EPC2204 (6 mΩ, 125 Apulsed) have nearly 20% lower RDS(on), as well as increased DC ratings compared with prior generation eGaN FET products. The performance advantage over a benchmark silicon device is even higher.
The EPC2204 has 25% lower on-resistance, yet is three times smaller in size. Gate charge (QG) is less than half that of the silicon MOSFET benchmark, and like all eGaN FETs, there is no reverse recovery charge (QRR), enabling lower distortion class-D audio amplifiers, as well as more efficient synchronous rectifiers and motor drives.
Alex Lidow, EPC’s Co-founder and CEO commented: “With the clear superiority of these new 100 V eGaN FETs, one might expect them to be priced at a premium. However, EPC has priced these state-of-the-art 100 V transistors comparable with their aging ancestor, the silicon power MOSFET. Designers can take advantage of devices that are higher performance, smaller, more thermally efficient, and at a comparable cost. The displacement of the power MOSFET with GaN devices continues to accelerate.”
