Power

PCIM Europe: SiC Six-Pack Power Module Eases Design Constraints

15th May 2013
ES Admin

Cree has introduced the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. When replacing a silicon module with equivalent ratings, Cree's six-pack module can reduce power losses by 75 percent, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density.

PCIM Europe was the launch platform for what Cree describes as the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. When replacing a silicon module with equivalent ratings, Cree's six-pack module can reduce power losses by 75%, which leads to an immediate 70 percent reduction in the size of the heat sink or a 50 percent increase in power density. The new six-pack SiC module unlocks the traditional design constraints associated with power density, efficiency and cost, thereby enabling the designer to create high performance, reliable and low cost power conversion systems. When compared to state-of-the-art silicon modules, the SiC 1.2 kV, 50A modules deliver performance equivalent to silicon modules rated at 150A.
The efficient switching of the SiC module allows us to use them with significantly less derating than silicon IGBTs, stated Dr. Jun Kang, research and applications manager, Yaskawa America, Inc. This feature enables significantly higher frequency operation, which both increases fundamental output frequency and reduces passive component size in the motor drive.
The CCS050M12CM2 six-pack modules from Cree are available for immediate shipping through Digi-Key and Mouser Electronics. Gate driver ICs suitable for SiC MOSFETs are available from IXYS and Texas Instruments. Complete gate driver boards (CRD-001) are available as samples from Cree.

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