Too cool to drift: how thermal engineering is redefining system stability EnclosuresSponsored 24 August 2026
TI semiconductors powering the future of intelligent systems at electronica Events NewsNews & AnalysisPress Releases 21 September 2026
Rohde & Schwarz security scanner launches at Security Expo 2026 Press ReleasesSecurity 21 September 2026
NMITE welcomes largest cohort and marks the next chapter of growth Press ReleasesStudentZoneStudentZone News 21 September 2026
Too cool to drift: how thermal engineering is redefining system stability EnclosuresSponsored 24 August 2026
TI semiconductors powering the future of intelligent systems at electronica Events NewsNews & AnalysisPress Releases 21 September 2026
Rohde & Schwarz security scanner launches at Security Expo 2026 Press ReleasesSecurity 21 September 2026
NMITE welcomes largest cohort and marks the next chapter of growth Press ReleasesStudentZoneStudentZone News 21 September 2026
Fairchild Semiconductor – Dual MOSFET Delivers High Efficiency and Increases Power Density in Synchronous Buck Applications Power 8 July 2009 byNews Desk
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Tiny, 1A/500mA LDO Regulators Operate from 1.425V to 3.6V and Dissipate Up to 1.9W at +70 Degrees Celsius Power 6 July 2009 byNews Desk
Fairchild Semiconductor’s RF Power DC-DC Converter Provides Industry’s Smallest Power Management Solution for W-CDMA/CDMA RFPAs in 3G Handsets Power 2 July 2009 byNews Desk
Compact 2 & 3 Watt extra wide input SIP DC/DC converter targets portable applications Power 2 July 2009 byNews Desk
Open frame power supply with additional charging facility now available from Ecopac Power Power 30 June 2009 byNews Desk
IR Introduces PWM Control IC for Energy-Efficient High Performance DC-DC Applications Power 29 June 2009 byNews Desk
Murata Power – Solutions – Easy to design-in 6W single output DC/DC Converters Power 29 June 2009 byNews Desk
Fairchild Semiconductor – Switch Manages 30W of Output Power without a Heatsink Power 26 June 2009 byNews Desk
Vishay Siliconix 30-V P-Channel TrenchFET Gen III Power MOSFET Sets New Industry First with 2.6-mΩ Maximum On-Resistance in SO-8 Footprint Area Power 25 June 2009 byNews Desk
