P-Channel MOSFET Offers On-Resistance Down to 30 mΩ
An AEC-Q101 qualified p-channel -100 V TrenchFET MOSFET designed to increase power density and efficiency in automotive applications has been introduced by Vishay Intertechnology.
It comes in a compact 5 mm by 6 mm PowerPAK® SO-8L package with gullwing leads, and it also features on-resistance down to 30 mΩ maximum / 24 mΩ typical at 10 V.
Vishay Intertechnology says that compared to the closest competing p-channel devices in the DPAK and D²PAK packages, the Automotive Grade MOSFET delivers 26 % and 46 % lower typical on-resistance, respectively, while offering a 50 % and 76 % smaller footprint.
The MOSFET's low on-resistance translates into energy savings by reducing power losses from conduction, while its superior gate charge down to 45 nC at 10 V reduces losses from gate driving.
With high temperature operation to +175 °C, the MOSFET provides the ruggedness and reliability required for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting.
In addition, the gullwing leads allow for increased automatic optical inspection (AOI) capabilities and provide mechanical stress relief for increased board-level reliability.
The device's -100 V rating provides the safety margin required to support several popular input voltage rails, including 12 V, 24 V, and 48 V systems.
As a p-channel MOSFET, the device enables simpler gate drive designs that don't require the charge pump needed by its n-channel counterparts. Lead (Pb)-free, halogen-free, and RoHS-compliant, the MOSFET is 100 % Rg and UIS tested.
Samples and production quantities of the SQJ211ELP are available now, with lead times of 14 weeks.