P-Channel MOSFET has low RDS ON for USB Type-C interface products
Alpha and Omega Semiconductor has announced the first in a family of P-Channel MOSFETs. The AONR21357 is designed for USB PD load switch applications.
As USB Type-C is emerging as the de-facto interface for PCs and mobile products, says the company, the USB-PD standard is being implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy.
Using the AONR21357 MOSFET as the load switch offers extended I/O voltage range, confirms the company. The enhanced P-Channel technology permits linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.
Described as robust and versatile, the AONR21357 is the initial product in the family. It uses the improved P-Channel MOSFET process to achieve low power loss and reliable start-up, says the company.
The MOSFET is rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage. It is designed for USB PD load switch applications with extended input voltage range. It features a maximum on resistance (RDSON) of 12.3mΩ under VGS at -4.5V. It also features a thermally enhanced 3.0 x 3.0mm DFN package. Typical applications for the MOSFET are load switch applications in notebook adapter-in/ battery in sockets.
The company has announced details of further P-Channel MOSFETs in the family, targeting the need for -30VDS and -25VGS discrete P-Channel MOSFETs. The portfolio will include SO-8 and two DFN (3.0 x 3.0 and 5.0 x 6.0mm) package options.
The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks.
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