OptiMOS 40V source-down power MOSFET added
Contemporary power system designs demand high power density levels and small form factors to maximise system-level performance. Infineon Technologies has tackled this challenge by focusing on system innovation with enhancements on the component level. Adding to the 25V device introduced in February, Infineon now brings the OptiMOS 40V low-voltage power MOSFET to the market.
It is packaged in the Source-Down (SD) PQFN with a 3.3x3.3mm2 footprint. The 40V SD MOSFET primarily addresses SMPS for server, telecom, and OR-ing, as well as battery protection, power tool, and charger applications.
The SD package features silicon that is being flipped upside down inside of the component. With that, the source potential is connected to the PCB over the thermal pad instead of the drain potential. In the end, this variant can lead to a major reduction of R DS(on) by up to 25% compared to the current technology.
The thermal resistance between junction to case (R thJC) is also significantly improved compared to the traditional PQFN packages. The SD OptiMOS can withstand high continuous currents of up to 194A. Additionally, the optimised layout possibilities and the more efficient utilisation of the PCB allow for greater design flexibility together with highest performance.
The OptiMOS SD 40V low-voltage power MOSFET is available in two versions, standard and Center-Gate. The Center-Gate variant is optimised for parallel operation of multiple devices. Both variants in the PQFN 3.3x3.3mm2 package can be ordered now.