It is packaged in the Source-Down (SD) PQFN with a 3.3×3.3mm2 footprint. The 40V SD MOSFET primarily addresses SMPS for server, telecom, and OR-ing, as well as battery protection, power tool, and charger applications.
The SD package features silicon that is being flipped upside down inside of the component. With that, the source potential is connected to the PCB over the thermal pad instead of the drain potential. In the end, this variant can lead to a major reduction of R DS(on) by up to 25% compared to the current technology.
The thermal resistance between junction to case (R thJC) is also significantly improved compared to the traditional PQFN packages. The SD OptiMOS can withstand high continuous currents of up to 194A. Additionally, the optimised layout possibilities and the more efficient utilisation of the PCB allow for greater design flexibility together with highest performance.
The OptiMOS SD 40V low-voltage power MOSFET is available in two versions, standard and Center-Gate. The Center-Gate variant is optimised for parallel operation of multiple devices. Both variants in the PQFN 3.3×3.3mm2 package can be ordered now.