NXP NextPower MOSFETs Deliver All-Around Efficiency With Industry’s Lowest RDS(on)

The NXP NextPower range of 25V and 30V MOSFETs deliver strong all-around performance in the following six parameters:

Low RDS(on) – the industry’s lowest RDS(on) Power-SO8 – providing low I2R losses and superior performance when used in SYNC FET or power OR-ing applications

Low Qoss for reduced losses between DRAIN and SOURCE, reducing wasted energy stored in the output capacitance (Coss) when voltage changes across output terminals

Low Miller charge (Qgd) for reduced switching losses and high-frequency switching

SOA performance providing tolerance to overload and fault conditions

Low gate charge (Qg) for reduced losses in the gate drive circuit

Superior junction temperature rating, Tj(max), with LFPAK, the rugged Power-SO8 package for demanding environments where high reliability is required

Key applications include synchronous buck regulators, DC-DC conversion, voltage regulator modules and power OR-ing



“Delivering the industry’s lowest RDS(on) at 25V and 30V is only part of the story. The real breakthrough with our latest NextPower devices is that we’re also enabling control of all aspects of MOSFET behavior – above and beyond on-state resistance and gate charge – for high-performance, high-reliability switching applications with maximum power efficiency,” said Charles Limonard, marketing manager, Power MOSFETs, NXP Semiconductors.