New Siliconix 25-V TrenchFET(R) Gen III Power MOSFET

The SiR476DP features a maximum on-resistance of 2.1mΩ at a 4.5-V gate drive and 1.7mΩ at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 89.25nC at 4.5V. Compared to the closest competing devices optimized for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 32% at 4.5V and 15% at 10V, and a 42% lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.

The Siliconix SiR476DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.

Vishay has also released the new 25-V SiR892DP and SiR850DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5V of 4.2mΩ and 9mΩ, on- resistance at 10V of 3.2mΩ and 7mΩ, with typical gate charges of 20nC and 8.4nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances. Samples and production quantities of the SiR476DP, SiR892DP, and SiR850DP are available now, with lead times of 10 to 12 weeks for large orders.