New 100V N-channel MOSFETs designed for automotive applications

16th December 2019
Lanna Cooper

Toshiba Electronics has launched its very first 100V N-channel power MOSFETs for automotive applications that are available in the small surface mount SOP Advance (WF) package. Designed specifically for modern 48V system applications, the devices are suited to use in boost converters for Integrated Starter Generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches.

The XPH4R10ANB and XPH6R30ANB devices improve the efficiency of automotive systems due to their low on-resistance (RDS(ON)).

In fact, the XPH4R10ANB offers an on resistance of just 4.1mΩ, significantly reducing system losses. Both devices are housed in the SOP Advance (WF) package that features wettable flanks. This small package was proven in 48V automotive applications and allows the use of Automated Optical nspection (AOI) to ensure the quality of solder joints.

Both devices are part of Toshiba’s U-MOSVIII-H series and offer a drain-source voltage (VDSS) of 100V and max operating temperature of 175ºC. The XPH4R10ANB supports a maximum continuous drain current of 70A and 210A when pulsed. The figures for the XPH6R30ANB are 45A and 135A respectively.

Both devices are now in mass production and are shipping in production quantities.

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