Power

100 V Vishay Siliconix N-Channel TrenchFET Power MOSFETs

24th February 2011
ES Admin
Datasheets
Vishay released two new 100 V n-channel TrenchFET power MOSFETs with on-resistance ratings down to 4.5 V VGS in SO-8 and PowerPAK® SO-8 packages. Utilizing Vishay's new ThunderFET® technology, the SiR870DP and Si4190DY offer the lowest values of on-resistance in the industry for 100 V MOSFETs with 4.5 V ratings. In addition, the product of on-resistance and gate charge — a key figure of merit (FOM) for MOSFETs in DC/DC converter applications — is also best in its class.
/> The SiR870DP's low on-resistance of 7.8 mΩ at 4.5 V is the industry's lowest. This MOSFET also offers a very low on-resistance of 6 mΩ at 10 V. For designers, the device's lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions.

With its industry-low 208 mΩ-nC FOM at 4.5 V, the SiR870DP combines low conduction and switching losses for higher frequency and switching applications. For designers requiring an SO-8 packaged device, the Si4190DY's on-resistance of 8.8 mΩ at 10 V and 12 mΩ at 4.5 V, in addition to its FOM of 340 mΩ-nC at 10 V and 220 mΩ-nC at 4.5 V, is the industry's best.

The devices released today are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered. By utilizing 5 V rated ICs, gate driver losses can be reduced and the overall design simplified by eliminating the need for a separate 12 V power rail.

The SiR870DP and Si4190DY are 100 % Rg and UIS tested. The MOSFETs are halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

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