With the increasing demand for power-management devices some new key challenges emerge, including a demand for smaller cell sizes that reduce overall chip costs and a lower Rds(on) for optimized heat dissipation. Thanks to a combination of advanced architecture and packaging, NEC Electronics’ new NP-Series PowerMOSFET are high-quality, proven power-management solutions.
The TO-263-7 PowerMOSFET series is manufactured in the UMOS-4 process, which is a trench technology and achieves an ultra-fine design rule of 0.25 m. This results in higher cell density, up to 160M cells/inch2, enabling chip designers to lower on-resistance over a given area of silicon. The new PowerMOSFET also features an advanced packaging developed by NEC Electronics using an unique multi-bonding technology that doubles the number of bonding wires from two to four wires. The additional wires allow the NEC Electronics MOSFETs to manage high currents with very low on-resistance in relatively small packages by limiting the on-resistance yet still improving current-carrying capabilities. With an ultra-low on-state resistance of Rds(on) = 1,5 milliohms, max. (VDSS = 40V; VGS =10V), the new TO-263-7 PowerMOSFET also helps to reduce the amount of the PCB dedicated to handling heat dissipation
The NP Series is part of NEC Electronics Europe’s family of low-voltage switching devices that provides efficient power management for power supplies, automotive systems, motor control, office, robotic and uninterruptible power applications.