UK’s young Eurovision viewers keen to augment viewing experience
Navitas launches into high-power markets with GeneSiC SiCPAK Modules and accelerates bare-die sales
dSPACE tools achieve ISO 26262 certification

Navitas launches into high-power markets with GeneSiC SiCPAK Modules and accelerates bare-die sales

Navitas, a pure-play, next-generation power semiconductor company, announces their expanded portfolio into higher power markets with their leading-edge silicon carbide (SiC) power products in SiCPAK modules and bare die.

Target applications cover centralised and string solar inverters, energy storage systems (ESS), industrial motion, electric vehicle (EV) on-board chargers, EV roadside fast chargers, wind energy, UPS, bi-directional microgrids, DC/DC converters, and solid-state circuit breakers.

Ranging from 650 to 6,500V, Navitas has a wide range of SiC technology. From an original line-up of discrete packages – from 8 x 8mm surface-mount QFNs to through-hole TO-247s  – the GeneSiC SiCPAK is an initial, direct entry point into higher-power applications. A comprehensive power-module roadmap, with high-voltage SiC MOSFETs and MPS diodes, GaN power ICs, high-speed digital isolators, and low-voltage silicon control ICs is being mapped out.

SiCPAK modules employ ‘press-fit’ technology to offer compact form factors for power circuits and deliver cost-effective, power-dense solutions to end users. The modules are built upon GeneSiC die that have already made a mark in terms of superior performance, reliability, and ruggedness.

Examples include a SiCPAK half-bridge module, rated at 6mOhm, 1,200V with trench-assisted planar-gate SiC MOSFET technology. Multiple configurations of SiC MOSFETs and MPS diodes will be available to create application-specific modules for superior system performance. The initial release will include 1,200V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings.

Within the lead-free SiCPAK, each SiC chip is silver (Ag) sintered to the module’s substrate for superior cooling and reliability. The substrate itself is ‘direct-bonded copper’ (DBC) and manufactured using an active-metal brazing (AMB) technique on silicon-nitride (Si3N4) ceramics, ideal for power-cycling applications. This construction delivers excellent strength and flexibility, fracture resistance, and good thermal conductivity for cool, reliable, long-life operation.

For customers who prefer to make their own high-power modules, all GeneSiC MOSFET and MPS diodes are available in bare die format, with gold (Au) and aluminium (Al) top-side metalisations.

Parts are available now to qualified customers.

Keep Up to Date with the Most Important News

By pressing the Subscribe button, you confirm that you have read and are agreeing to our Privacy Policy and Terms of Use
Previous Post

UK’s young Eurovision viewers keen to augment viewing experience

Next Post

dSPACE tools achieve ISO 26262 certification