The devices exhibit low output charge (QOSS: 74/24nC) and low gate switch charge (QSW: 21/7.5nC) and allows for a 4.5V logic level drive.
Compared with current devices that the U-MOS VIII-H process, the new devices have lower key figures of merit for MOSFETs for switching applications including RDS(ON) • Qoss, and RDS(ON) • QSW.
The TPH3R70APL is housed in a 5x6mm SOP advance package and can handle drain currents (ID) up to 90A while the TPN1200APL is in a 3x3mm TSON advance package and handles ID levels up to 40A.
Toshiba Electronics Europe will continue to expand its MOSFET portfolio in line with market trends in order to continue to improve power supply efficiency.
