N-channel MOSFETs improve reliability & save energy

27th May 2015
Nat Bowers

Featuring low reverse recovery charge and on-resistance, Vishay Intertechnology has announced three devices in its 600V EF series of fast body diode n-channel power MOSFETs. The SiHx21N60EF, SiHx47N60EF and SiHx70N60EF increase reliability and save energy in industrial, telecomms, computing and renewable energy applications.

Built on second-generation superjunction technology, the 600V fast body diode MOSFETs provide a complement to Vishay's existing standard E series components, expanding the company's offering to devices that can be used in zero-voltage/soft switching topologies such as phase-shifted bridges and LLC converter half bridges.

The 21A SiHx21N60EF is offered in four packages, while the 47A SiHx47N60EF and 70A SiHx70N60EF are each available in two. The devices feature ultra-low on-resistance of 176, 65 and 38mΩ, respectively, and low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecomms power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers and semiconductor capital equipment.

The SiHx21N60EF, SiHx47N60EF and SiHx70N60EF increase reliability in these applications by offering a reverse recovery charge which is 10 times lower than standard MOSFETs. This allows the devices to regain the ability to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress.

The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100% UIS testing. The MOSFETs are RoHS-compliant and halogen-free. Samples are available now while production quantities will be available in Q2 2015, with lead times of 18-20 weeks for large orders.

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