Infineon’s 300mm thin-wafer technology is a key basis for performance improvements of next-gen automotive power MOSFET product families. Thin-wafer technology minimises power losses and enables compact MOSFET designs for high system efficiency and power density. Compared to standard 200mm wafers, the 300mm thin-wafer technology features a 50% larger wafer diameter, allowing two-and-a-half times as many chips to be produced.
With wafer thinning down to 60µm, the OptiMOS 5 power semiconductors on 300mm thin-wafer technology are among the world’s thinnest. Infineon starts its OptiMOS 5 thin-wafer product portfolio with 40V variants in a S308 package (TSDSON-8) with a small footprint of only 3.3×3.3mm.
Compared to the previous OptiMOS generation, the OptiMOS 5 40V products feature a 40% reduction in on-resistance RDS(ON) and further minimise power losses. In addition, they offer a 35% lower Figure of Merit RDS(ON)xQ g to further optimise switching behaviour. As a result, the power semiconductors deliver high power density and energy efficiency for a broad range of automotive BLDC and H-bridge drive applications such as power window, door control, sun roof, fuel pumps, and also valve control and fast switching DC/DC converters.
“With the automotive power MOSFETs in 300mm thin-wafer technology Infineon strengthens its technology and market leadership,“ says Jochen Hanebeck, President, Automotive Division, Infineon Technologies. “Infineon ensures to offer high-performance automotive power MOSFETs in large scale volume production at competitive price. Our automotive customers will benefit from supply security and our long-term productivity roadmap of the 300mm production line.”
OptiMOS 5 40V products are available now with RDS(ON) ranging from 2.8mΩ to 8.4mΩ.
