The mid-power P-channel transistors, XTR2N0325 and XTR2N0350, are intended for a maximum operation drain-source voltage of -30V, while the XTR2N0525 and XTR2N0550 are intended for a maximum operation drain-source voltage of -50V.
The XTR2N0307 small signal 30V P-channel MOSFET features an on-state resistance of 7Ω at 230°C and continous drain currents of 350mA (900mA peak); whereas the other small signal transistor, the XTR2N0807 80V N-channel has an on-state resistance of 9.1Ω and continous drain currents of 200mA (450mA peak).
The XTR2N transistors are able to operate over a temperature range from -60 to +230°C (5 years at +230°C). Being operational at high temperatures is mandatory not only in applications where the environment is at elevated temperature, but also where self-heating of a power device makes the temperature increase inside the application casing.
The XTR2N devices are available now in high-reliability compact hermetic or plastic packages, as well as tested bare dies.