Power

MOSFETs handle extreme temperature operation

2nd July 2014
Nat Bowers
0
Datasheets

Designed for high-reliability, extreme temperature and extended lifetime applications, X-REL Semiconductor has announced four mid-power P-channel and two small-signal P- and N-channel MOSFETs. With excellent switching and linear characteristics, and very low leakage current, the transistors are suited for power conversion, power management, level translation and sensor interface applications.

The mid-power P-channel transistors, XTR2N0325 and XTR2N0350, are intended for a maximum operation drain-source voltage of -30V, while the XTR2N0525 and XTR2N0550 are intended for a maximum operation drain-source voltage of -50V.

The XTR2N0307 small signal 30V P-channel MOSFET features an on-state resistance of 7Ω at 230°C and continous drain currents of 350mA (900mA peak); whereas the other small signal transistor, the XTR2N0807 80V N-channel has an on-state resistance of 9.1Ω and continous drain currents of 200mA (450mA peak).

The XTR2N transistors are able to operate over a temperature range from -60 to +230°C (5 years at +230°C). Being operational at high temperatures is mandatory not only in applications where the environment is at elevated temperature, but also where self-heating of a power device makes the temperature increase inside the application casing.

The XTR2N devices are available now in high-reliability compact hermetic or plastic packages, as well as tested bare dies.

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