Power

MOSFETs cover 60mΩ to 4.3Ω RDS(ON) range

12th March 2015
Barney Scott
0

Fairchild has introduced its 800V SuperFET II MOSFET family, featuring broad package offerings and the industry’s lowest RDS(ON) and COSS. The family enables designers to improve the efficiency, cost-effectiveness and reliability of high performance solutions requiring a breakdown voltage higher than 650V, and also reduces PCB space for these designs by enabling the elimination of components.

The reliability of the 800V SuperFET II MOSFET family, coupled with its efficiency and thermal characteristics, makes it suitable for a variety of applications. Meanwhile, its range of package options offers flexibility, particularly with size constrained designs. Key applications for the family include LED lighting, power supplies for LED televisions and home theater audio equipment, power adapters, servers, industrial power and auxiliary power supplies, as well as micro solar inverters.

Fairchild’s latest 800V SuperFET II MOSFET family is comprised of 26 devices, covering a RDS(ON) range of 4.3Ω to an industry low of 60mΩ, all offered in a wide range of standard package options, giving designers greater choice and flexibility in employing the best device for their specific application. For example, the FCD850N80Z, a key member of the family, combines a low 850mΩ RDS(ON) (maximum) in DPAK with 6-11% lower RDS(ON) (maximum) and 8-13 percent lower COSS (at 400V) than its primary competitors, making it suitable for LED lighting applications which require low resistance and are size constrained.

“Manufacturers can improve the efficiency and reliability of their products with Fairchild’s 800V SuperFET II MOSFET family, which is significantly more efficient than its closest competitor thanks to excellent switching performance and low specific resistance,” said Wonhwa Lee, Principal Technical Marketing Engineer, Fairchild. “The family uses the latest super-junction technology to enable a small form factor with higher efficiency than ever before and its robust built-in diode at high dv/dt conditions can improve the reliability of industrial bridge circuits.”

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